@Article{CalderónAlGuCrDeVaMi:1997:PhChEl,
               author = "Calder{\'o}n, A. and Alvarado-Gil, J. J. and Gurevich, Yu. G. and 
                         Cruz-Orea, A. and Delgadillo, I. and Vargas, H. and Miranda, Luiz 
                         Carlos Moura",
          affiliation = "Departimento de Fisica, CINVESTAV-IPN and Laboratorio de Ciencias 
                         Fisicas, Universidade Estadual do Norte Fluminense and Laboratorio 
                         de Sensores e Materials, Instituto Nacional de Pesquisas Espaciais 
                         and {} and {} and Laboratorio de Ciencias Fisicas, Universidade 
                         Estadual do Norte Fluminense and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "Photothermal Characterization of Electrochemical Etching Processed 
                         n-Type Porous Silicon",
              journal = "Physical Review Letters",
                 year = "1997",
               volume = "79",
               number = "25",
                pages = "5022--5025",
                month = "Dec.",
             keywords = "temperature, Electrochemically, Porous silicon material.",
             abstract = "The room temperature thermal diffusivity evolution of 
                         electrochemically formed porous silicon as a function of the 
                         etching time is investigated. The measurements were carried out 
                         using the open-cell photoacoustic technique. The experimental data 
                         were analyzed using a composite two-layer model. The results 
                         obtained strongly support the existing studies, indicating the 
                         presence of a high percentage of SiO2 in the composition of porous 
                         silicon material.",
           copyholder = "SID/SCD",
                 issn = "0031-9007",
             language = "en",
           targetfile = "Photothermal characterization of electrochemical etching processed 
                         n-type porous silicon.pdf",
        urlaccessdate = "12 maio 2024"
}